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| DATA SHEET SILICON TRANSISTOR ARRAY PA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The PA1456 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES MIN. 1.4 0.6 0.1 2.54 1.4 0.5 0.1 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. * Easy mount by 0.1 inch of terminal interval. * High hFE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 10 2.5 PA1456H CONNECTION DIAGRAM 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IB(DC) PT1** PT2*** Tj 150 100 7 5 0.5 3.5 28 150 V V V A/unit A/unit A/unit W W C (B) IC(pulse)* 10 (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 (E) . R1 = 3.0 k . . R2 = 300 . Tstg -55 to +150 C * PW 300 s, Duty Cycle 10 % ** 4 Circuits, Ta = 25 C *** 4 Circuits, Tc = 25 C The information in this document is subject to change without notice. Document No. IC-3521 (O. D. No. IC-6340) Date Published September 1994 P Printed in Japan (c) 1994 PA1456 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 MIN. TYP. MAX. 10 10 UNIT TEST CONDITIONS VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 2 A VCE = 2 V, IC = 4 A IC = 2 A, IB = 2 mA IC = 2 A, IB = 2 mA IC = 2 A IB1 = -IB2 = 2 mA . . VCC = 50 V, RL = 25 . . See test circuit A mA -- -- * * 2000 500 7000 3000 0.9 1.6 1 3 1 20000 VCE(sat) * VBE(sat) * ton tstg tf 1.5 2 V V s s s * PW 350 s, Duty Cycle 2 % / pulsed SWITCHING TIME TEST CIRCUIT RL = 25 VIN IC T.U.T. Base Current Wave Form . VCC = 50 V . Collector Current Wave Form ton IB1 IB2 90 % IC 10 % tstg tf IB1 IB2 PW . PW = 50 s . Duty Cycle 2 % . VBB = -5 V . 2 PA1456 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING CURVE OF SAFE OPERATING AREA 10 dT - Percentage of Rated Current - % PW SAFE OPERATING AREA 100 IC - Collector Current - A 80 60 40 20 5 = S/ 2 1 0.5 D Li issi m pa ite ti d on 10 ms ted i 0 5 im bL S/ 30 0 s s 1m s 3 m ms bL im ite 0.2 Single Pulse 0.1 0 50 100 150 TC - Case Temperature - C 1 5 10 50 20 VCE - Collector to Emitter Voltage - V 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC PA1456 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 20 1 Circuit Operation 4 3 2 1 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 10 0 25 50 75 100 125 Ta - Ambient Temperature - C 150 0 25 50 75 100 125 TC - Case Temperature - C 150 DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 VCE (sat) - Collector Saturation Voltage - V VCE = 2.0 V Pulse Test 10 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 1000*IB Pulse Test hFE - DC Current Gain 10000 1000 T = a C 5 12 5 C 7 C 25 C 5 -2 1 Ta = 125 C 75 C 25 C -25 C 0.1 0.1 100 10 0.01 0.1 1 IC - Collector Current - A 10 1 IC - Collector Current - A -10 3 VCEO MAX. ss Di ip at io d n Li m i te d PA1456 TRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - C/W 100 VCE 10 V VBE (sat) - Base Saturation Voltage - V 10 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 1000*IB Pulse Test 10 1 1.0 Ta = -25 C 25 C 75 C 125 C 0.1 0.1 1 10 PW - Pulse Width - ms 100 0.1 0.1 1 IC - Collector Current - A 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 5 2.0 1. 4 1.0 0.8 0.6 0.4 IC - Collector Current - A 4 3 2 IB = 0.2 mA 1 0 1 2 3 4 VCE - Collector to Emitter Voltage - V 5 4 PA1456 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 PA1456 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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